| PART |
Description |
Maker |
| STK22C48N25 STK22C48P45 STK22C48P35 STK22C48N45 ST |
2K x 8 AutoStorenvSRAM QuantumTrapCMOS Nonvolatile Static RAM 2K × 8自动存储非易失QuantumTrap⑩⑩的CMOS非易失性静态随机存储器
|
Electronic Theatre Controls, Inc.
ABB, Ltd.
|
| 140XBP01000 |
Modicon Quantum
|
List of Unclassifed Man...
|
| L12016-1630T-C L12005-1900H-C L12007-1294H-C L1201 |
Quantum Cascade Laser
|
Hamamatsu Corporation
|
| HL6724MG |
The HL6724MG is a 0.67 um band AlGaInP laser diode with a multi-quantum well (MQW) structure
From old datasheet system
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure.
|
HITACHI[Hitachi Semiconductor]
|
| STK14C88-5C45M STK14C88-M STK14C88-5C35M STK14C88- |
32K x 8 AUTOSTORE nvSRAM QUANTUM TRAP CMOS NONVOLATILE STATIC RAM 32K的8自动存储非易失量子端粒酶的CMOS非易失静态RAM
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Cypress Semiconductor, Corp.
|
| EQ-731L |
EQ-731L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-733L |
EQ-733L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| EQ-433L |
EQ-433L is composed of an InAs Quantum Well Hall Element and a signal processing IC chip in a package
|
Asahi Kasei Microsystems
|
| LDM-0808-300M-91 |
CW Output Power: 300mW Typical 808 nm Emission Wavelength High-deeiciency Quantum Well Structure TO5 Package
|
Roithner LaserTechnik GmbH
|
| NX6411GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
|
California Eastern Labs
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
